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c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 www. ruichips .com ru 20 t7 g n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 20 v gss gate - source voltage 8 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c 2 a m ounted on large heat sink i d p 300 s pulse drain current tested t a =25 c 2 8 a t a =25 c 7 i d continuous drain current ( vgs=4.5v) t a = 7 0 c 5 .5 a t a =25 c 1.5 p d maximum power dissipation t a = 7 0 c 0.96 w r q j a thermal resistance - junction to ambient 83.5 c /w ? 20 v/ 7 a, r ds ( on ) = 12 m w (typ.) @ v gs = 4.5 v r ds ( on ) = 18 m w (typ.) @ v gs = 2.5 v ? super high dense cell design ? reliable and rugged ? esd protected ? lead free and green available ? p wm applications absolute maximum ratings tssop - 8 dual n - channel mosfe t
c opyright ruichips semicondu ctor co . , ltd rev . a C sep ., 201 2 2 www. ruichips .com ru 20 t7 g electrical characteristics ( t a =25 c unless otherwise noted) r u 20 t7 g symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds =250 m a 2 0 v v ds = 2 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 0 .5 0. 7 1 . 0 v i gss gate leakage current v gs = 8 v, v ds =0v 10 u a v gs = 4.5 v, i ds = 7 a 1 2 16 m w r ds ( on ) drain - source on - state resistance v gs = 2 .5 v, i ds = 5 .5 a 18 25 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 1 a, v gs =0v 1 v t rr reverse recovery time 18 ns q rr reverse recovery charg e i sd = 1 a, dl sd /dt=100a/ m s 8 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.5 w c iss input capacitance 1155 c oss output capacitance 180 c rss reverse transfer capacitance v gs =0v, v ds = 10 v, frequency=1.0mhz 140 pf t d ( on ) turn - on delay time 6 t r turn - on rise time 12 t d ( off ) turn - off delay time 50 t f turn - off fall time v dd = 10 v, r l = 1.4 w , i ds = 7 a, v gen = 4.5 v, r g = 3 w 14 ns gate charge characteristics q g total gate charge 13 q gs gate - source charge 1 q gd gate - drain charge v ds = 16 v, v gs = 4.5 v, i ds = 7 a 3.5 nc c opyright ruichips semicondu ctor co . , ltd rev . a C sep ., 201 2 3 www. ruichips .com ru 20 t7 g typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal t ransient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec) c opyright ruichips semicondu ctor co . , ltd rev . a C sep ., 201 2 4 www. ruichips .com ru 20 t7 g typical characteristics output characteristics drain - source o n resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c) c opyright ruichips semicondu ctor co . , ltd rev . a C sep ., 201 2 5 www. ruichips .com ru 20 t7 g typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc) c opyright ruichips semicondu ctor co . , ltd rev . a C sep ., 201 2 6 www. ruichips .com ru 20 t7 g avalanche test circuit and waveforms switching time test circuit and waveforms c opyright ruichips semicondu ctor co . , ltd rev . a C sep ., 201 2 7 www. ruichips .com ru 20 t7 g ordering and marking information device marking packag e packaging quantity reel size tape width ru 20 t7 g ru 20 t7 g tssop8 tape&reel 3000 13 12mm c opyright ruichips semicondu ctor co . , ltd rev . a C sep ., 201 2 8 www. ruichips .com ru 20 t7 g package information tssop - 8 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max d 2.900 3.100 0.114 0.1 22 a2 0.800 1.050 0.031 0.041 e 4.300 4.500 0.169 0.177 a1 0.050 0.150 0.002 0.006 b 0.190 0.300 0.007 0.012 e 0.65 (bsc) 0.026 (bsc( c 0.090 0.200 0.004 0.008 l 0.500 0.700 0.020 0.028 e1 6.250 6.550 0.246 0.258 h 0.25(typ) 0.01(typ) a 1.200 0.047 0 8 0 8 c opyright ruichips semicondu ctor co . , ltd rev . a C sep ., 201 2 9 www. ruichips .com ru 20 t7 g customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investo r@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com |
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